Introduction to magnetic random-access memory
138,00 $

Introduction to magnetic random-access memory

BERNARD DIENY, RONALD B. GOLDFARB, LEE


Introduction to magnetic random-access memory

BERNARD DIENY, RONALD B. GOLDFARB, LEE

138,00 $ 138,00 $
Régulier: 138,00 $
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Livre numérique non disponible
Résumé

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science.

This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Détails
Titre
Introduction to magnetic random-access memory
Prix
138,00 $
Sujet
Format Poche
Non
Langue
Français/French
Date de publication
2016-11-15
ISBN
9781119079354
Code Interne
2171219
Numéro de produit
2171219
Format numérique
pdf
Protection
Adobe DRM
Entrepôt Numérique
NUMILOG

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